| PART |
Description |
Maker |
| ATC100A0R7BT ATC100A220JT ATC100A0R2BT ATC100A150J |
380W GaN WIDEBAND PULSED
|
RF Micro Devices
|
| MAGX-000035-05000P |
GaN Wideband 50 W Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solution...
|
| ECA-2AM100 ECJ-2VB1H103K 1812SMS-68NJLB ERJ-8GEYJ1 |
280W GaN Wideband Pulsed Power Amplifier
|
RF Micro Devices
|
| MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MAGX-002731-SB2PPR MAGX-002731-100L00 MAGX-002731- |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| GRM21BF51C106ZE15L GRM188R71H103KA01D 100A3R3BW150 |
225MHz TO 1215MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
| NPA1006 |
GaN Wideband Power Amplifier, 28 V, 12.5 W
|
M/A-COM Technology Solu...
|
| NPT2022 NPT2022-14 |
GaN Wideband Transistor 48 V, 100 W
|
M/A-COM Technology Solu...
|
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
120W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| ECE-V1HA101UP RF3932SQ EEV-TG2A101M ERJ-8GEYJ100V |
60W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| MAGX-001214-250L00 MAGX-001214-SB1PPR MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
